Job Description: We’re looking for an MBE Growth Engineer to contribute to semiconductor growth at Microsoft Quantum Purdue, located at the Birck Nanotechnology Center in West Lafayette, IN. Job Responsibilities: Growth rate calibration by Rheed measurements. Optimization of growth conditions. Optimization of oxide removal conditions. Growth of material which will be fabricated into devices used to study topological quantum computing. Development of new growth techniques and protocols. Characterization of grown material. Documentation of growth parameters, characterization results and layer structure. Participation in local and global growth team meetings. Job Requirements: 2+ years’ First-hand experience growing InAs, GaAs, AlAs and their alloys. Ability to meet Microsoft, customer and/or government security screening requirements are required for this role. 2+ years’ experience with an in-depth understanding of ultra-high vacuum principles. Excellent written and oral communication skills. Strong attention to detail and good organizational skills. A Bachelor’s degree in Materials Science, Physics or Engineering discipline along with 2+ years of technical experience and proficiency within Molecular Beam Epitaxy. Job Details: Company: Microsoft Vacancy Type: Full Time Job Location: Lafayette, IN, US Application Deadline: N/A Apply Here careers-trivia.com
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